Thermal Dependence of Quantum Dot Solar Cells

Abstract

AbstractVarious temperature dependent optoelectronic properties were measured for GaAs-based p-type / intrinsic / n-type (pin) solar cell devices containing 5-layers of InAs quantum dots (QDs) grown with strain-compensation layers. Curve fitting of the dark diode characteristics allowed for the temperature dependence of the saturation current and the ideality parameter to be determined. The resulting parameter values indicate high material quality. Air mass zero illuminated current density vs. voltage measurements were used to determine the temperature coefficients of the open circuit voltage, short circuit current, maximum power, and fill factor. A strong correlation between the temperature dependent quantum dot electroluminescence peak emission wavelength and the sub-GaAs bandgap spectral response was observed.