Pulsed-Laser Annealing of Ion-Implanted GaAs: Theory and Exeriment-Reference-Cited by-同舟云学术

Pulsed-Laser Annealing of Ion-Implanted GaAs: Theory and Exeriment

Published:1980 Issue: Volume:1 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Wood R. F.,Lowndes Douglas H.,Christie W. H.

Abstract

ABSTRACTIt is shown that, in the pulsed-laser irradiation of crystalline or lightly damaged GaAs, good agreement is obtained between measured and calculated thresholds for melting, for catastrophic damage due to vaporization, and for the duration of surface melting at various energy densities. Good agreement between theory and experiment is also obtained for dopant profile spreading during pulsed-laser annealing.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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