Characterization of New Materials in A Four-Sample Thermoelectric Measurement System

Author:

Ghelani Nishant A.,Loo Sim Y.,Chung Duck-Young,Sportouch Sandrine,Nardi Stephan de,Kanatzidis Mercouri G.,Hogan Timothy P.,Nolas George S.

Abstract

ABSTRACTSeveral new materials in the CsBi4Te6, A2Bi8Se13, (A = K, Rb, Cs), HoNiSb, Ba/Ge/B (B = In, Sn), and AgPbBiQ3 (Q = S, Se, Te) systems have shown promising characteristics for thermoelectric applications. New synthesis techniques are able to produce samples at much higher rates than previously possible. This has led to a persistent challenge in thermoelectric materials research of rapid and comprehensive characterization of samples. This paper presents a description of a new 4-sample transport measurement system and the related measurement techniques. Special features of the system include fully computer-controlled operation (implemented in LabView™) for simultaneous measurement of electrical conductivity, thermo-electric power, and thermal conductivity. This system has been successfully used to characterize several new thermoelectric materials (including some of the above-mentioned compounds) and reference materials exhibiting a wide range of thermal conductivities.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference6 articles.

1. Thermal conductivity measurement from 30 to 750 K: the 3ω method

2. Measurement System for Doping and Alloying Trends In New Thermoelectric Materials;Hogan;Materials Research Society Symposium Proceedings,1999

3. Thermoelectric Materials: Solid State Synthesis;Kanatzidis;Naval Research Reviews,1996

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