Metastable phase formation by ion mixing of Nb–Al multilayers

Author:

Pampus K.,Dyrbye K.,Torp B.,Bormann R.

Abstract

The structure of Nb–Al thin films after ion mixing was studied for compositions from 20 to 85 at. % Al as a function of temperature in the range between 40 and 620 K. The phase formation was determined by transmission electron microscopy. At lower temperatures, only supersaturated bcc-solid solution, NbAl, and amorphous phase were found throughout the studied composition range. Besides these phases irradiation at temperatures above 470 K causes the formation of a metastable crystalline compound at an overall composition close to Nb25Al75, and for T = 623 K the equilibrium compound NbAl3 is formed. The other intermetallic phases Nb2Al and Nb3Al have not been observed at any irradiation temperature. Calculations of the Gibbs free energies of the various phases are presented, and the reliability of extrapolations to regions of metastability with respect to temperature and composition is commented on. The phase formation during heavy-ion irradiation is discussed in the context of the calculated free energies and kinetic constraints. For temperatures above 300 K, the attainment of a metastable phase equilibrium between the bcc solid solution and the amorphous phase is proposed due to the influence of radiation enhanced diffusion.

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Structural evolution during mechanical alloying and annealing of a Nb-25at%Al alloy;Journal of Materials Science;2000

2. Metastable phase formation in undercooled near-eutectic Nb-Al alloys;Materials Science and Engineering: A;1997-03

3. Microstructure formation in rapidly solidified eutectic Nb-59.5at%Al alloys;Journal of Materials Science Letters;1997

4. Thermodynamic and kinetic requirements for inverse melting;Materials Science and Engineering: A;1994-05

5. Ion beam mixing in metallic and semiconductor materials;Materials Science and Engineering: R: Reports;1994-05

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