Tunneling Assisted Photocurrent Multiplication in a-Si Based p-i/Sinx/i-n Structure Junction

Abstract

ABSTRACTPhotocurrent multiplication has been observed in a-Si based p−i/SiNx/i−n junction cells under reverse biased high electric field. An apparent external quantum efficiency exceeds 20. A systematic investigation on electric and optoelectronic properties has been made to clarify the mechanism of photocarrier multiplication. The results indicate the possibility of inter-band tunneling via localized states in the a-SiN layer, which is induced by field-redistribution due to the built-up of trapped charges at the a-SiN/a-Si interface.