Transport Properties Of Doped CsBi4Te6 Thermoelectric Materials
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Published:1998
Issue:
Volume:545
Page:
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ISSN:0272-9172
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Container-title:MRS Proceedings
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language:en
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Short-container-title:MRS Proc.
Author:
Brazis Paul W.,Rocci Melissa,Chung Duck-Young,Kanatzidis Mercouri G.,Kannewurf Carl R.
Abstract
AbstractIn previous investigations we have introduced a variety of new chalcogenide-based materials with promising properties for thermoelectric applications. The chalcogenide CsBi4Te6 was previously reported to have a high ZT product with a maximum value at 260K. In order to improve this value, a series of doped CsBi4Te6 samples has been synthesized. Current doping studies have been very encouraging, with one sample found to have a maximum power factor of 51.5 μW/cm·K2 at 184 K. This paper reports on material characterization studies through the usual transport measurements to determine optimum doping concentration for various dopants.
Publisher
Springer Science and Business Media LLC
Subject
General Engineering
Reference14 articles.
1. [7] Chung D.-Y. , Brazis P. W. , Kannewurf C. R. , and Kanatzidis M. G. , to be submitted for publication.
Cited by
2 articles.
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