Heteroepitaxial Growth of In203 on Ysz (100) Single Crystal Surface

Abstract

ABSTRACTIn203 films were deposited on YSZ (001) single crystal surface at 800°C at an oxygen pressure of 14 Pa by pulsed laser deposition (PLD) method. A heteroepitaxial relationship between the film and the substrate was seen in TEM photographs and X-ray diffraction measurements. The w locking curve full width of half maximum (FWHM) of the In203 (004) x-ray diffraction was 0.06°. Film conductivities were ∼10 S/cm or less, while carriers on the order of lO18/cm3 were generated.