Author:
Ketata K.,Koumetz S.,Ketata M.,Debrie R.
Abstract
AbstractThis work introduces a new dry etching simulation technique of the sputtering component of Reactive Ion Etching (R.I.E.) and presents experimental verifications for GaAs. The final objective is to correlate the etch rate to the plasma reactor parameters, which can be incorporated into a computer-simulation program.
Publisher
Springer Science and Business Media LLC
Reference12 articles.
1. [1] Gerodolle A. , Pelletier J. and al. Simulation of plasma processes with two-dimensional program TITAN. Le Vide, Les Couches Minces. Supplement N° 256. Mars-Avril 1991.
2. Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline Targets
3. Introduction to ion and plasma etching
4. [7] Silvaco international. User's manual. May 1992.
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