HDP-FSG Integration in Multilevel Interconnect Devices-Reference-Cited by-同舟云学术

HDP-FSG Integration in Multilevel Interconnect Devices

Published:1999 Issue: Volume:564 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

M'saad Hichem,Vellaikal Manoj,Zhang Lin,Witty Derek

Abstract

AbstractHDP-FSG has been integrated as an inter-metal dielectric in a multilevel interconnect scheme. Process regimes for obtaining stable HDP-FSG films were identified. Gap-fill of high aspect ratio structures was achieved for 0.18µm technology node. HDP-FSG film stability, homogeneity, and impurity content were evaluated. In addition to the development of the HDP-FSG process, integration of the interconnect module was investigated and optimized. Analysis of the AI/FSG interface integrity was tested for gap-fill and corrosion with SEM and for fluorine diffusion with SIMS. CMP rate of the FSG was determined and compared to HDP-USG. Al metallization integration approaches in conjunction with FSG were identified.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference12 articles.

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