Author:
Ueno Koichiro,Camargo Edson Gomes,Kawakami Yoshifumi,Moriyasu Yoshitaka,Nagase Kazuhiro,Kuze Naohiro
Abstract
ABSTRACTA microchip-sized InSb photodiode based infrared sensor (InSb PDS) that operates at room temperature was developed. The InSb PDS consists of 700 photodiodes connected in series and consumes no power, because it works in photovoltaic mode to output an open-circuit voltage. The InSb PDS has a typical responsivity of 1,900 V/W and an output noise of 0.15 μV/Hz1/2. A detectivity of 2.8×108 cmHz1/2/W was obtained at 300 K. The InSb PDS has performance high enough for applications such as mobile electronic equipment, personal computers, and consumer electronics
Publisher
Springer Science and Business Media LLC
Reference7 articles.
1. Ambient temperature diodes and field‐effect transistors in InSb/In1−xAlxSb
2. 8–13 μm InAsSb heterojunction photodiode operating at near room temperature
3. 1/f noise studies in uncooled narrow gap Hg1−xCdxTe non-equilibrium diodes
4. Extension of longwavelength IR photovoltaic detector operation to near room-temperatures
5. 7. Kuze N. , Camargo E. G. , Ueno K. , Kawakami Y. , Moriyasu Y. , Nagase K. , Sato M. , Ishibashi K. and Ozaki M. , Phys. stat. sol. (c), (2006), to be published.
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献