The Possible Mechanism of Excitation of the f - f Emission from Er-O Clusters in Silicon

Abstract

AbstractThe Er2O3 quantum dot (cluster) with dimensions about 1.2nm in silicon is discussed as the possible source of the Er related emission in Si:Er,O, excited by photogenerated carriers or in a light-emitting diodes (LED) at forward bias. This quantum dot is represented as a spherical quantum well 0.9eV in depth. The electron level with energy about 0.15eV below the bottom of the silicon conduction band plays role of an electron trap. The trapped electron interacts with a hole in valence band of silicon forming “indirect” exciton bonded to quantum well. The energy is transferred to f - shell of erbium by the Auger electron - hole recombination.