Correlation Between Resistivity Characteristics and Electronic Structure Parameters of the Ni-Pd-P Amorphous Alloys

Abstract

AbstractThe temperature dependencies of resistivity of the Ni-Pd-P-based amorphous alloys (P content was varied from 14 to 23 at. %) have been measured in a wide temperature range using the standard four-probe method. The temperature coefficients of resistivity (TCR) have been calculated. TCR value is decreased with P content increasing and becomes negative for Ni46Pd31P23 alloy. On the other hand, TCR value is increased with Pd content increasing while P content is not changed. Such behavior could be attributed to the electronic transfer effect from Ni to Pd and from P to Ni. These lead to the Fermi level shift to d-band edge and to the increasing influence of the Mott's localized state. The peculiarities caused by structural relaxation processes have been observed at the temperature range of 550 – 620 K. The relaxation process was shown to consist at least of two stages. The kinetics of the crystallization process has been analyzed using the Kissinger method.