Author:
Kawahara T.,Yamamuka M.,Makita T.,Yuuki A.,Mikami N.,Ono K.
Abstract
ABSTRACTWe have investigated influences of Ti sources on properties of (Ba,Sr)TiO3 [BST] films prepared on Pt/SiO2/Si substrates by liquid source chemical vapor deposition (liquid source CVD): TiO(DPM)2 [titanyl bis (dipivaloylmethanato), TiO(C11 H19O2)2], Ti(O-i-Pr)2 (DPM)2 [bis (isopropoxy) bis (dipivaloylmethanato) titanium, Ti(o-i-C3H7)2(C11H19O2)2], and TTIP [titanium tetraisopropoxide, Ti(O-i-C3H7)4]. Improved electrical properties and step coverage were obtained using TiO(DPM)2 at a substrate temperature TS=420'C and a reactor pressure P=1.5Torr as follows: a dielectric constant ε=210, equivalent SiO2 thickness teq=0.51nm, leakage current density JL=6.6×10∼−8A/cm2 at +1.1V, dielectric loss tan δ=0.007, and coverage of 0.8. However, hillocks appeared on the BST film surface under these conditions, while the film surfaces were relatively smooth using TTIP. The density of these hillocks appeared to be related to the BST(110) peak intensity of the X-ray diffraction pattern.
Publisher
Springer Science and Business Media LLC
Reference6 articles.
1. Preparation of(Ba,Sr)TiO3Thin Films by Chemical Vapor Deposition Using Liquid Sources
2. Step Coverage and Electrical Properties of(Ba,Sr)TiO3Films Prepared by Liquid Source Chemical Vapor Deposition UsingTiO(DPM)2
3. Synthesis of Novel Sr Sources for Metalorganic Chemical Vapor Deposition ofSrTiO3
4. 1. Ohno Y. , Horikawa T. , Shinkawata H. , Kashihara K. , Kuroiwa T. , Okudaira T. , Hashizume Y. , Fukumoto K. , Eimori T. , Shibano T. , Arimoto K. , Itoh H. , Nishimura T. and Miyoshi H. : 7994 Symp. on VLSI Tech. Dig. (1994) 149.
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献