Electrical Properties of Bottom Gate Poly-Si TFTs by NiSi2 Seed-Induced Lateral Crystallization and Its Applications-Reference-Cited by-同舟云学术

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Electrical Properties of Bottom Gate Poly-Si TFTs by NiSi2 Seed-Induced Lateral Crystallization and Its Applications

Published:2016-07-14 Issue:50 Volume:1 Page:3429-3433
ISSN:2059-8521
Container-title:MRS Advances
language:en
Short-container-title:MRS Advances

Author:

Lee Sol Kyu,Seok Ki Hwan,Kiaee Zohreh,Kim Hyung Yoon,Chae Hee Jae,Lee Yong Hee,Jang Gil Su,Joo Seung Ki

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1557/adv.2016.509.pdf

Reference15 articles.

1. M. Stewart, R. S. Howell, L. Pires, and M. K. Hatalis, IEEE Trans. Electron Devices, 48, 5, 845–851 (2001).

2. J. J. Lih, C. F. Sung, C. H. Li, T. H. Hsiao and H. H. Lee, SID Symp. Digest of Tech. Papers, 35, 1, 1504–1507 (2004).

3. F. Plais, P. Legagneux, C. Reita, O. Huet, F. Petinot, D. Pribat, B. Godard, M. Stehle and E. Fogarassy, Microelectron. Eng., 28, 1–4, 443-446 (1995).

4. H. D. Kim, J. K. Jeong, H. J. Chung and Y. G. Mo, SID Symp. Digest of Tech. Papers, 39, 1, 291–294 (2008).

5. I. W. Wu, Solid State Phenom., 37, 38, 553–564 (1994).

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