Creating Electrical Bistability Using Nano-bits — Application in 2-Terminal Memory Devices-Reference-Cited by-同舟云学术

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Creating Electrical Bistability Using Nano-bits — Application in 2-Terminal Memory Devices

Published:2017-01 Issue:4 Volume:2 Page:195-208
ISSN:2059-8521
Container-title:MRS Advances
language:en
Short-container-title:MRS Advances

Author:

Salaoru Iulia,Alotaibi Sattam,Halafi Zahra Al,Paul Shashi

Funder

Engineering and Physical Sciences Research Council

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1557/adv.2016.677.pdf

Reference32 articles.

1. S. Subianto, N. Dutta, M. Andersson, N.R. Choudhury, Adv. Colloid. and Interface Science 235 (2016) 56.

2. J. Soeda, T. Okamoto, C. Mitsui, J. Takeya, Organic Electronics: physics, materials, applications 39 (2016) 127.

3. D. Riedel, T. Wehlus, T.C.G. Reusch, J. Brabec Organic electronics 32 (2016) 27

4. P.J. Jeon, K. Lee, E. Young Park, S. Im, H. Bae, Organic electronics, 32 (2016) 208.

5. K. Ran, B. Rosner, B. Butz, R.H. Fink, E. Spiecker, Nanotechnology 27 (42) (2016) 425703

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1. To Be or Not to Be – Review of Electrical Bistability Mechanisms in Polymer Memory Devices;Small;2022-02-08

2. Storing electronic information on semi-metal nanoparticles;Materials Advances;2022

3. Beyond CMOS;2021 IEEE International Roadmap for Devices and Systems Outbriefs;2021-11

4. Electrical Re-Writable Non-Volatile Memory Device Based on PEDOT:PSS Thin Film;Micromachines;2020-02-10

5. Ab initio quantum transport in AB-stacked bilayer penta-silicene using atomic orbitals;RSC Advances;2018

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