Author:
Baraff G. A.,Lannoo M.,Schluter M.
Abstract
ABSTRACTThe levels and excitation energies of the weakly interacting AsGa—Asi defect pair have been calculated using the model energy functional introduced by Baraff and Schluter, modified so as to allow Jahn Teller relaxation to distort the Asi away from the symmetry site. The physics underlying this calculation and the results emerging from it are described in this paper. We find that many previously unrelated experimental observations about EL2 are well accounted for by this model. However, there are still some controversial aspects of the fit of the model to the observed properties of EL2 which we cite as requiring further study.
Publisher
Springer Science and Business Media LLC
Cited by
2 articles.
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1. Unification of the properties of theEL2 defect in GaAs;Physical Review B;1989-03-15
2. Point Defects in GaAs;Point and Extended Defects in Semiconductors;1989