Photoluminescence from Microcrystalline Silicon and Related Materials-Reference-Cited by-同舟云学术

Photoluminescence from Microcrystalline Silicon and Related Materials

Published:1992 Issue: Volume:283 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Rlickschloss M.,Landkammer B.,Ambacher O.,Vepřek S.

Abstract

ABSTRACTIntense photoluminescence has been obtained from nanocrystal-line silicon prepared in completely dry processing by the optimizing the crystallite size and the chemical passivation of the grain boundaries due to a controlled postoxidation of the plasma deposited films.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference24 articles.

1. [22] Kux A. , Muller F. and Koch F. , this proceedings, paper F14.13

2. Quantum size effects on photoluminescence in ultrafine Si particles

3. Dependence of electrical conductivity of nanocrystalline silicon on structural properties and the effect of substrate bias

4. Control of porous Si photoluminescence through dry oxidation

5. Porous silicon formation: A quantum wire effect

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