Conductance in Microcrystalline BbxCx/Si Heterojunction Diodes-Reference-Cited by-同舟云学术

Conductance in Microcrystalline BbxCx/Si Heterojunction Diodes

Published:1992 Issue: Volume:283 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Lee Sunwoo,Ton Thuong,Zych D.,Dowben P. A.

Abstract

ABSTRACTPlasma-enhanced chemical vapor deposited boron carbide (B1-xCx) thin films are shown to be a potential electronic material suitable for high temperature devices. The boron carbide films make excellent p-n heteroj unction diodes with /i-type silicon substrates. The B1-xCx/Si heteroj unction diodes are demonstrated to have rectifying properties at temperatures above 200°C and reverse current is strongly dependent on the energy of the band gap of the boron carbide films.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference16 articles.

1. The effect of surface treatment on the electrical properties of metal contacts to boron-doped homoepitaxial diamond film

2. Characterization of boron carbide thin films fabricated by plasma enhanced chemical vapor deposition from boranes

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