Abstract
The following article, originally published in Materials Research Society Proceedings Volume 482, is based on the address that Shuji Nakamura, recipient of an MRS Medal Award, presented during Symposium X of the 1997 MRS Fall Meeting. Nakamura was recognized for “the development of lattice-mismatched GaN based heteroepitaxy and its application to the creation of blue and green light-emitting diodes and short wave-length laser diodes.”
Publisher
Springer Science and Business Media LLC
Subject
Physical and Theoretical Chemistry,Condensed Matter Physics,General Materials Science
Cited by
51 articles.
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