Author:
Druz B.,Zaritskiy I.,Yevtukhov Y.,Konchits A.,Valakh M.,Kolesnik S.,Shanina B.,Visotski V.
Abstract
ABSTRACTTetrahedral diamond like carbon (ta-C) films were deposited onto Si substrates using Filtered Cathodic Vacuum Arc (FCVA) process. Stress of deposited films was varied in the range 3.5÷8.5 GPa. The ESR (stationary and pulse) and Raman techniques were used to analyze sp2 related defects in the pseudo-gap of undoped, as deposited 20 – 100 nm thick films. The results are compared with data for direct ion beam deposited from CH4 plasma hydrogenated DLHC films and nature of paramagnetic defects in DLC is discussed.
Publisher
Springer Science and Business Media LLC
Cited by
8 articles.
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