Non-Equilibrium Formation Of Silicon Nitride During Both Ball Milling And Ion Bombardment

Abstract

ABSTRACTPhase evolution during ball milling of Si in NH3 gas and during subsequent annealing has been studied and compared with nitride formation during ion bombardment of Si. X-ray diffraction, differential thermal analysis, Rutherford backscattering and channeling, combustion analysis and transmission electron microscopy have been used as analytical techniques. Results have shown that an amorphous SixNy(Fe) phase forms during milling which transforms into α-Si3N4 and FeSi2 on annealing. During ion bombardment, slightly N-rich Si3N4 is formed but it is mostly crystalline at temperatures between 150 and 450°C.