Author:
Paz De Araujo Carlos A.,McMillan L. D.,Scott J. F.
Abstract
AbstractThis paper describes the classification of existing integration schemes for ferroelectric memories, including both nonvolatile and volatile devices, and the status of device development for CMOS (both SRAM and DRAM architecture), GaAs JFET structures, bipolar, and true ferroelectric FETs (in which the ferroelectric is deposited in the gate region to modify the source-to-drain current when the polarization is reversed). Emphasis in the paper is on electroding, film deposition, drying and baking, and annealing steps.
Publisher
Springer Science and Business Media LLC
Reference10 articles.
1. [2] Proceedings of the First International Symposium on Integrated Ferroelectrics (ISIF), Ferroelectrics (special issue) (1990).
2. Statistical Mechanics
3. [8] Evans J. , in Ref. 4.
Cited by
9 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献