Abstract
ABSTRACTHigh photosensitivity and fast photoresponse have proved a-Si:H to be a suitable thin-film photoconductor for large-size linear image sensors. Besides the a-Si:H bulk properties, the a-Si:H/electrode interfaces are of major influence on the sensor performance. In view of this performance, the readout circuit has to be designed carefully with respect to the desired dynamic range. Care has to be taken to avoid electrostatic hazards when mounting the sensor, as the breakdown voltage of a-Si:H sensor elements was found to be about 60 volts.
Publisher
Springer Science and Business Media LLC
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