Author:
Albers Mark L.,Shanks H. R.,Shinar J.
Abstract
ABSTRACTPreliminary results of a comparative study of some optical and ESR properties of aSi:H films prepared by rf sputtering on a cold substrate in 10 mtorr of either He, Ar, or Xe and 0.5 mtorr H2 are presented. In all cases the concentration of Si-H and Si-H2 bonds, the optical gap and the dangling bond spin density all generally increase as the rf power is decreased from 3.3 to 0.27 W/cm2. However, whereas the optical energy gap of He/H2 sputtered films ranges from 1.26 eV to 2.13 eV, the gap of Ar/H2 and Xe/H2 films sputtered under these conditions only changes from 1.54 to 1.94 and 1.41 to 1.71 eV, respectively. The dangling bond spin densities are lowest (~1017 cm-3) in the Ar/H2 sputtered films at high rf power and highest (~5x1018 cm-3) in Xe/H2 sputtered films at low power.
Publisher
Springer Science and Business Media LLC
Reference10 articles.
1. BONDING IN HYDROGENATED AMORPHOUS SILICON
2. 4. Albers M. L. , Shanks H. R. , and Shinar J. , Proc. Third. Int. Symp. Optical and Optoelectronic Appl. Sci. and Eng., Innsbruck, Austria, 1986; the spin densities cited in this work are incorrect and have been revised in the present work.
3. Amorphous and Liquid Semiconductors
4. Vibrational Spectra of Hydrogen in Silicon and Germanium
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