Capacitance-Voltage Characteristics of Metallic Gate/Oxide/a-Si:H Mos Structures-Reference-Cited by-同舟云学术

Capacitance-Voltage Characteristics of Metallic Gate/Oxide/a-Si:H Mos Structures

Published:1986 Issue: Volume:70 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Schropp Ruud E. I.,Snijder Jan,Verwey Jan F.

Abstract

ABSTRACTThe density of states (DOS) has for the first time been calculated throughout the entire bandgap region of undoped amorphous silicon from quasi-static capacitance-voltage (QSCV) measurements using MOS structures. The QSCV DOS is compared with the DOS obtained by the field-effect method. It is shown, that the coexistence of states of a different nature at the same bandgap level can be revealed by the temperature dependence of low frequency MOS CV measurements.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference16 articles.

1. Surface states at steam-grown silicon-silicon dioxide interfaces

2. On the quality of contacts in a-Si:H staggered electrode thin-film transistors

3. Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopy

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1. Characterization of the hole capacitance of hydrogenated amorphous silicon metal–insulator–semiconductor structures;Journal of Applied Physics;2001-12-15

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3. Electrode Interdependence and Hole Capacitance in the Capacitance -Voltage Characteristics of Hydrogenated Amorphous Silicon Thin-Film Transistors;MRS Proceedings;1998

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