Point Defects in Gallium Arsenide Characterized by Positron Annihilation Spectroscopy and Deep Level Transient Spectroscopy

Abstract

AbstractPositron annihilation lifetime spectroscopy (PALS) is a unique technique for detection of vacancy related defects in both as-grown and irradiated materials. We present a systematic study of vacancy defects in stoichiometrically controlled p-type Gallium Arsenide grown by the Hot- Wall Czochralski method. Microstructural information based on PALS, was correlated to crystallographic data and electrical measurements. Vacancies were detected and compared to electrical levels detected by deep level transient spectroscopy and stoichiometry based on crystallographic data.