Author:
Palleau J.,Oberlin J.C.,Braud F.,Torres J.,Mermet J. L.,J Mouche M-,Ermolieff A.,Piaget J.
Abstract
ABSTRACTThe thermal stability at the Cu / SiO2 interface has been studied as a function of the annealing atmosphere composition. Using either good vacuum conditions or refractory metal encapsulation, no copper diffusion into SiO2 has been found even for thermal treatments at 500°C for l0h. Moreover, a noticeable accumulation of the refractory metal, ( Cr, Ti ), at the Cu / SiO2 interface has been observed. The diffusion phenomena allows the self-aligned formation of a refractory metal barrier layer at the SiO2 surface.
Publisher
Springer Science and Business Media LLC
Cited by
4 articles.
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2. Copper drift in high-dielectric-constant tantalum oxide thin films under bias temperature stress;Applied Physics Letters;2006-04-03
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