Author:
Karam N.H.,Liu H.,Yoshida I.,Katsuyama T.,Bedair S.M.,El-Masry N.,Jaing B.,Salih A.S.M.,Rozgonyi G.
Abstract
ABSTRACTSelective epitaxial growth of III-V compounds based on GaAs has been achieved using Ar+ ion laser assisted chemical vapor deposition (LCVD) on GaAs substrates. The growth rate, at carefully selected growth conditions, can be controlled to a few Å/s at bias temperatures as low as 250°C by conventional LCVD multi-scan technique. Typical Gaussian thickness profiles are achieved by this growth technique. On the other hand, flat top thickness profiles are achieved with direct writing of GaAs mono-layers by laser assisted atomic layer epitaxy (LALE). X-ray topography is demonstrated as a powerful tool for characterizing the grown films and photoluminescence shows that the quality of the grown films are comparable with those grown by conventional MOCVD or ALE.
Publisher
Springer Science and Business Media LLC
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