Author:
Dauscher Anne,Lenoir Bertrand,Jacquot Alexandre,Bellouard Christine,Dinescu Maria
Abstract
ABSTRACTLead telluride thin films have been grown on BaF2(111) substrates by pulsed laser deposition from a Nd:YAG laser (λ = 532 nm) at very low temperature (150°C). The chemical composition, the morphology and the crystallographic structure of the layers depend strongly on the deposition conditions. Post-annealing treatments of the films also affect their microstructure. Preliminary electrical properties, conducted in the temperature range of 5 to 350 K, revealed that all the samples were n-type with Hall mobility values greater than 104 cm2/V.s at low temperatures.
Publisher
Springer Science and Business Media LLC
Cited by
2 articles.
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1. Nanometer-Scale Thermoelectric Materials;Springer Handbook of Nanotechnology;2007
2. Low-Dimensional Thermoelectricity;Nanomaterials Handbook;2006-01-26