Low Temperature Rapid Thermal Formation of Tin Barrier Layers-Reference-Cited by-同舟云学术

Low Temperature Rapid Thermal Formation of Tin Barrier Layers

Published:1987 Issue: Volume:92 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Barney Cohen Barney Cohen,Jaim Nulman Jaim Nulman

Abstract

ABSTRACTTiN and TiN/TiSi2 films, formed by reacting titanium sputtered onto source-drain and field areas, may be used as local interconnects, low resistance plated junctions, and diffusion barriers. This paper discusses the application of RTP to the low temperature reaction of titanium on silicon and oxide substrates. By adjusting temperature and ambient the nitridation and silicidation reactions may be controlled to provide the desired TiN-TiSix thickness ratio. The advantages of ammonia ambient are discussed.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference3 articles.

1. Formation of TiN/TiSi2/p+-Si/n-Si by rapid thermal annealing (RTA) silicon implanted with boron through titanium

2. Titanium nitride local interconnect technology for VLSI

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