Slip Free Rapid Thermal Processing

Author:

Blake Julian,Gelpey Jeffrey C.,Moquin John F.,Schlueter James,Capodilupo Ron

Abstract

ABSTRACTSlip is a primary concern in Rapid Thermal Processing (RTP). Diagnostics for slip are compared, including: visual inspection, differential interference contrast microscopy (Nomarski), X-ray topography, decorative etching and optical surface scanning. Data from each technique are presented. RTP control parameters (temperature uniformity, heat up and cool down rates, edge cooling) and substrate parameters (wafer size, oxygen content, edge damage) which may have an effect on slip are discussed. Typical results for implant annealing sequences on a water-wall DC arc lamp RTP system are presented and used to suggest techniques for process optimization.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Rapid Thermal Processing;Handbook of Semiconductor Manufacturing Technology, Second Edition;2007-07-09

2. Temperature Control and Temperature Uniformity During Rapid Thermal Processing;MRS Proceedings;1991

3. Elimination of slips on silicon wafer edge in rapid thermal process by using a ring oxide;Journal of Applied Physics;1990-06-15

4. Modelling of wafer heating during rapid thermal processing;Applied Physics A Solids and Surfaces;1990-02

5. Rapid Thermal Process Integration;MRS Proceedings;1989

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