Correlation Between Electrical-Optical and Structural Properties of Microcrystalline Silicon N Type Films

Abstract

AbstractWide band gap microcrystalline silicon films have aroused considerable interest since they combine some electro-optical advantages of amorphous and crystalline materials highly important to produce electro-optical devices such as TFTs and solar cells. In this paper we present results concerning the electro-optical characteristics of highly transparent and conductive n-type µc-Si based films. Here, emphasis is given to the production of n-type ýtc-films with optical gaps of 2.3 eV and dark conductivity's of 6.5 Scm-1