Dependence of Light-Induced Esr on NitroGen Content in Amorphous Silicon-Nitrogen Alloys

Abstract

AbstractThe LESR signals are observed for the a-Si1-xNx:H samples over a wide range of nitrogen content at 77K. By decomposing the LESR signals using three components, i.e. the neutral Si dangling bond (Do) component, the broad component with a linewidth of 16 G, and the narrow component with a linewidth of 5 G, we find that the three components are observed only in the Si-rich samples. The density of light-induced Do increases with x, whereas the densities of both the narrow and the broad components increase in the range of x≦0.32 and are almost independent of x for larger x. The g-value of the broad components falls down sharply from 2.01 to 2.006 with an increase in x, while the g-value of the narrow component is unchanged and it is around 2.004. All of the three components can be annihilated by sub-gap illumination. The origins of the broad and the narrow components are discussed.