Epitaxy-Like Growth of Polycrystalline Silicon on the Seed Crystallites Grown on Glass

Abstract

AbstractPolycrystalline silicon thin films were grown on glass by two-steps, i.e., deposition of seeds on glass (1) and growth epitaxy-like on the seeds (2). For the growth of seeds, the surface reaction was intentionally enhanced by impingment of atomic hydrogen at rather high temperature (450 °C). Strongly textured polycrystalline Si exhibiting (220) preferential orientation was grown epitaxy-like on the seeds.