Nonlinear Electrical Functions of Porous Silicon Light-Emitting Diodes

Abstract

AbstractSome nonlinear electrical characteristics in electroluminescent porous silicon (PS) diodes with a relatively thin PS layer (0.5–5 μm thick) are described. The experimental PS diodes were composed of a semitransparent Au film, a PS layer, p- or n-type Si substrate, and an ohmic back contact. The PS layers were prepared by anodizing Si wafers in an ethanoic HF solution. In some cases, the PS layers were treated by rapid thermal oxidization (RTO) process. When the bias voltage is applied, the PS diodes show the electrical behavior like the metal-insulator-semiconductor (MIS) diodes. The negative-resistance characteristics and memory effect are also observed. These results indicate that the quantum-structured nature of the PS layer appears not only in the optical properties but also in the electrical properties.