Low Temperature Transport Properties of Ru2Si3 Single Crystals

Abstract

AbstractWe present here low temperature transport properties of Ru2Si3 single crystals. Below room temperature the resistivity behaviour of this material is extrinsic. The Hall coefficient is positive down to about 10 K and the becomes negative below. We explain this crossover with a two band model. At very low T, the magnetoresistance of our crystals shows the typical behaviour for a doped semiconductor on the metallic side of the metal-insulator transition and can be described by a scaling law characteristic for weak localisation with strong electronelectron interactions.