The Influence of the Substrate Temperature on the Recombination Processes in a-Si:H-Reference-Cited by-同舟云学术

The Influence of the Substrate Temperature on the Recombination Processes in a-Si:H

Published:1997 Issue: Volume:467 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Lubianiker Y.,Balberg I.,Fonseca L.,Weisz S. Z.

Abstract

ABSTRACTWe have studied the four phototransport properties as a function of temperature in undoped a-Si:H films deposited with different substrate temperatures in the range 150 – 225°C. The analysis of the results indicates how Ts determines the densities of the various defects. The general trend of decrease of both the density of dangling bonds and the Urbach energy is in agreement with the weak bond breaking model. However, we conclude that a slight modification of this model is required.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference12 articles.

1. The two carriers’ mobility‐lifetime products and their light intensity dependencies in hydrogenated amorphous silicon

2. The sign of photocarriers and thermal quenching of photoconductivity in a-SiH

3. Steady‐state photocarrier grating technique for diffusion length measurement in photoconductive insulators

4. Study of Recombination Processes in a-Si:H by the Temperature Dependence of the two Carriers Phototransport Properties

5. On thermal quenching of the photoconductivity in hydrogenated amorphous silicon

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