Light-intensity and temperature dependence of trap-dangling bond recombination in hydrogenated microcrystalline silicon

Abstract

AbstractA quantitative study of the trap-dangling bond tunneling recombination in hydrogenated microcrystalline silicon (μc-Si:H) is presented. The transition coefficients were measured at various light exposures and temperatures between T = 10 K and T = 140 K using time-domain measurements of spin-dependent recombination (TSR). TSR is a new characterization method related to electrically detected magnetic resonance (EDMR). It combines the advantages of pulsed electron spin resonance with that of EDMR. In contrast to previous models, the experimental results can only be interpreted if the interaction between the spins of the trap and the dangling bonds as well as triplet recombination is considered.