Characterization of Chemically Prepared PZT Thin Films

Abstract

ABSTRACTWe have systematically varied processing parameters to fabricate PZT 53/47 thin films. Polycrystalline PZT thin films were fabricated by spin depositing Pt coated Sio2/Si substrates with alkoxide solutions. Our study focused on two process parameters: 1) heating rate and 2) excess Pb additions. We used rapid thermal processing techniques to vary heating rates from 3°C/min to 8400°C/min. Films were characterized with the following excess Pb additions: 0, 3, 5, and 10 mol% For all process variations, films with greater perovskite content had better ferroelectric properties. Our best films were fabricated using the following process parameters: an excess Pb addition of 5 mol%, a heating rate of 8400°C/min and annealing conditions of 700°C for 1 min. Films fabricated using these process conditions had a remanent polarization of 0.27 C/m2and a coercive field of 3.4 MV/m.