Characteristics of Metal/PZT/p—Si MIS Capacitors

Abstract

ABSTRACTLead Zirconate Titanate (PZT) thin films have been sputter deposited on p–Si. The patterned PZT films were annealed in a furnace as well as in a rapid thermal annealer. The high frequency characterization of metal–PZT– p– Si capacitors show good Capacitance–Voltage characteristics. The effective dielectric constant of PZT on Si was found to be very low and depends on the thickness of the PZT film and the annealing conditions. The high frequency C–V shows hysteresis which is due to the injection of charges across the interface.