Processing, Perovskite Phase Development, and Dielectric Properties for Sol-Gel Derived Pb[(Mg1/3Nb2/3)0.9Ti0.1]O3 Thin Layers

Abstract

ABSTRACTAlkoxide-based solutions were synthesized and used to prepare Pb[(Mg1/3Nb2/3)0.90Ti0.10]O3 (90PMNT) thin layers on platinized Si. A multilayering spin casting method was used. The effects of preparation procedure, additives, and intermediate heat-treatments on perovskite phase content, microstructure development and dielectric properties are reported. The greatest perovskite content (∼99%) and the best dielectric properties (K ≈ 1500–2000, tan∂ ≈ 0.03 at 100 kHz) resulted from rapid thermal processing of individual layers at 800°C. Polarization-reversal measurements are also reported.