Defect States in Hydrogenated Amorphous Silicon-Sulphur Alloys by ESR and PAS

Abstract

ABSTRACTWe have presented ESR and PAS measurements for a series of a-SiS:H and a-Si: H films deposited by glow discharge at different parameters. The spin density in a-SiS:H alloys measured by ESR is essentially independent of the sulphur content, while the density of defects measured by PAS increases significantly with the increasing of sulphur content. The ESR signals in a-SiS:H alloys strongly depend on both annealing and illumination. The spin density increases up to 540°C and then decreases with raising annealing temperature for a-SiS:H and a-Si:H alloys. The results suggest that some new defects such as molecular hydrogen and microvoids are appeared when addition of sulphur to a-Si:H films.