Effects of Temperature and Charge Depletion on the Spin Density in Hydrogenated Amorphous Silicon

Abstract

ABSTRACTThe dependence of the spin density upon temperature and charge depletion is calculated based on the standard defect model in a-Si:H of a D-center with positive, neutral, and negative charge states. The results are compared with recent measurements of depletion width modulated spin densities and temperature-dependent spin densities. It is shown that the initial charge density assumed for the defect system substantially affects conclusions regarding electronic correlation energies drawn from the measurements.