Author:
Gurary A. I.,Tompa G. S.,Stall R. A.,Liang S.,Lu Y.,KUO H. C.
Abstract
ABSTRACTElemental Vapor Transport Epitaxy (EVTE) is a novel technique for semiconductor manufacturing, which combines the advantages of Molecular Beam Epitaxy (MBE) and Vapor Phase Epitaxy (VPE). EVTE provides a high level of elemental flux control, scaling to large deposition areas, and elimination of elemental Ga source related oval defects. EVTE has been successfully applied to the deposition of III-V and II-VI thin films and heterostructures. Design considerations and evaluations of the novel EVTE elements: elemental flux regulating valve operating at temperatures >1250°C with demonstrated response times less than 1 second and elemental flux distribution manifold are presented. The calculated operational parameters for EVTE are in good agreement with the observed experimental results.
Publisher
Springer Science and Business Media LLC
Cited by
1 articles.
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