A Novel Ruthenium Precursor for MOCVD without Seed Ruthenium Layer

Abstract

ABSTRACTRuthenium thin films were deposited on SiO2/Si substrates at 275 – 400 °C by metalorganic chemical vapor deposition (MOCVD) using liquid precursor (2.4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium [Ru(DMPD)(EtCp) DMPD: 2.4-dimethylpentadienyl EtCp: etylcyclopentadienyl]. Deposition characteristics of the films were compared with those using bis(ethylcyclopentadienyl)ruthenium.The decomposition temperature of Ru(DMPD)(EtCp) was 80 °C lower than Ru(EtCp)2. Both films consisted of Ru single phase for all deposition temperature range and showed an resistivity bellow 20 μΩcm for the films deposited above 300 °C. The initial nucleation of Ru films from Ru(DMPD)(EtCp) precursor was smaller in size and denser than that from Ru(EtCp)2. The deposition process from Ru(DMPD)(EtCp) has much shorter incubation time than that from Ru(EtCp)2.