Abstract
ABSTRACTThe microstructure of high-quality recrystallized Si films on
SiO2 substrates produced by CO2 laser induced
zone-melting has been investigated by high voltage electron microscopy
(HVEM). Subgrain boundaries represent the major defects in these
recrystallized films. The origin of the subboundaries has been traced to
periodic internal stress concentrations occurring at the faceted growth
interface. These highly localized stresses cause plastic deformation of the
growing single crystal film by nucleation of an array of slip dislocations.
The mechanism responsible for the formation of subgrain boundaries has been
revealed to be polygonization, where thermally activated dislocations
rearrange themselves into the lower energy configuration of the low angle
grain boundary.
Publisher
Springer Science and Business Media LLC
Cited by
3 articles.
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