Author:
Aziz M. J.,Tsao J. Y.,Thompson M. O.,Peercy P. S.,White C. W.,Christie W. H.
Abstract
ABSTRACTTwo solute trapping models are compared. They are shown to predict identical
behavior at any given end of a phase diagram but different behavior as the
phase diagram is traversed. The segregation behavior of dilute solutions of
Ge in Si (ke < 1) and of Si in Ge (ke > 1) during regrowth from
pulsed-laser melting is being studied using transient conductance, high
resolution RBS, and SIMS. Our results to date suggest a significant amount"
of solute trapping (k —> 1) of Ge in Si and of Si in Ge. Such a result
would be inconsistent with the predictions of one of the models.
Publisher
Springer Science and Business Media LLC
Cited by
20 articles.
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