The Microstructure of Transiently Annealed Donor Implants in GaAs

Abstract

ABSTRACTUndoped SI (100) GaAs has been implanted with selenium and tin ions at room temperature at an ion energy of 300 keV and using ion dose in the range 1 × 1014 to 1 × 1015 ions cm−2. Transient annealing at 1000°C and above has been studied using electrical measurements and transmission electron microscopy. The results show that tin implanted samples have comparatively higher values of electrical activity and mobility than those implanted with selenium ions. A difference in the microstructure of these two implants was observed. Selenium implanted samples show dislocation lines and loops possessing 1/2<110> Burgers vectors while tin implanted GaAs contains dislocation loops of 1/2<110> and 1/3<111> types and also dislocation lines having 1/2<110> Burgers vectors. Both types of defect in tin implanted samples are decorated with precipitates.