Abstract
ABSTRACTSince the first time-resolved Raman studies of pulsed laser annealing (PLA)
effects in Si, a number of cw Raman studies have been performed which
provide a much improved basis for understanding the consequences on Raman
spectra of temperature-dependent resonance effects, high carrier density
effects, phonon anharmonicity, and strain effects. Here we briefly review
these effects and then analyze the latest pulsed Raman studies of PLA
including Stokes/anti-Stokes ratios, the shift and shape of the first order
line, and time-resolved second-order spectra. The Raman data indicate the
existence of a Raman-silent phase followed by a rapidly cooling solid which
begins within 300 K of the normal melting temperature of Si. The Raman data
also give evidence of carrier densities in the recrystallizing solid of
~1−2×l019/cm3 .
Publisher
Springer Science and Business Media LLC
Cited by
3 articles.
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