Author:
Mao B.-Y,Chang P.-H.,Lam H.W.,Shen B.W.,Keenan J.A.
Abstract
ABSTRACTThe effects of post implantation annealing on the properties of buried oxide silicon-on-insulator (SOI) substrates in the temperature range of 1150°C to 1300°C have been studied. Microstructural analyses showed that the crystallinity of the top silicon layer was improved at higher annealing temperature. Lower thermal donor generation at 450°C was observed in SOI annealed at higher temperature. The improvement in microstructure and lower thermal donor generation were correlated to the lower oxygen concentration in the top silicon film.
Publisher
Springer Science and Business Media LLC